Room temperature InGaAs/InP distributed feedback laser directly grown on silicon

We report an optically pumped room-temperature O-band DFB laser, based on the buffer-less epitaxial growth of high quality InGaAs/InP waveguides directly on silicon wafer

Coarse wavelength division multiplexer on silicon-on-insulator for 100 GbE

A four-channel cascaded MZl based de-multiplexer at O-band with coarse channel spacing of 20 nm and band flatness of 13 nm is demonstrated on silicon-on-insulator. The device shows a mean crosstalk and insertion loss below -16 dB and 2.5 dB

Germanium-on-silicon mid-infrared waveguides and Mach-Zehnder interferometers

In this paper we describe Ge-on-Si waveguides and Mach-Zehnder interferometers operating in the 5.2 - 5.4 mu m wavelength range. 3dB/cm waveguide losses and Mach-Zehnder interferometers with 20dB extinction ratio are presented

The diversification of national football teams

The inclusion of foreign-born sportspeople in national sports teams has become increasingly common. At the same time, the assumed increase in diversity within national football teams has turned into a major subject of (inter)national controversy and debate. This applies, in particular, to the football World Cup, as the assumed increase in foreign-born players in national football teams detracts from the (homogeneous) nation-state basis of the Fédération Internationale de Football Association’s (FIFA) international football competitions. However, the actual dynamics and complexities of the presence of foreign-born players in national football teams within this context have remained under-researched. In this paper, we use the idea of ‘migration corridors’ to examine the underlying structures that contribute to the diversification of national football teams, in particular during the World Cup. We do so from both an immigration and emigration perspective. By connecting our foreign-born player data to three types of migration corridors, we discuss the bidirectiona

Carrier lifetime assessment in integrated Ge waveguide devices

Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For a 1 pm wide Ge waveguide, a lifetime of 1.6 ns is estimated for a carrier density of around 2 x10(19) cm(-3)

Extraction of carrier lifetime in Ge waveguides using pump probe spectroscopy

Carrier lifetimes in Ge-on-Si waveguides are deduced using time-resolved infrared transmission pump-probe spectroscopy. Dynamics of pump-induced excess carriers generated in waveguides with varying Ge thickness and width is probed using a CW laser. The lifetimes of these excess carriers strongly depend on the thickness and width of the waveguide due to defect assisted surface recombination. Interface recombination velocities of 0.975 x 10(4) cm/s and 1.45 x 10(4) cm/s were extracted for the Ge/Si and the Ge/SiO2 interfaces, respectively. Published by AIP Publishing

Monolithic integrated InP distributed bragg reflector (DBR) lasers on (001) silicon

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